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ABSOLUTE MAXIMUM RATINGS Tc=25ec unless otherwise specified
|
Symbol |
|
Parameter |
Test Conditions |
Values |
Unit |
|
IGBT |
|||||
|
VCES |
|
Collector - Emitter Voltage |
TVj=25°C |
1250 |
V |
|
VGES |
|
Gate - Emitter Voltage |
|
±30 |
V |
|
IC |
|
DC Collector Current |
TC=25°C |
230 |
A |
|
|
TC=80°C |
150 |
A |
||
|
ICM |
|
Repetitive Peak Collector Current |
tp=1ms |
200 |
A |
|
Ptot |
|
Power Dissipation Per IGBT |
|
694 |
W |
|
Diode |
|||||
|
VRRM |
|
Repetitive Reverse Voltage |
TVj=25°C |
1250 |
V |
|
IF(AV) |
|
Average Forward Current |
TC=25°C |
150 |
A |
|
|
TC=80°C |
100 |
A |
||
|
IFRM |
|
Repetitive Peak Forward Current |
tp=1ms |
200 |
A |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
