
PNP Type Transistor 2SA940
DESRCRIPTION:
ABSOLUTE MAX I MUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Continuous Collector Current
-1.5
A
PTOT
Total dissipation at Tcase=25 ℃
25
W
Tj
Junction Temperature
150
℃
Tstg
Stora-1.5ge Temperature Range
-55〜150
℃
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Symbol
Parameter
Test Condition
Value
Unit
Min
Type
Max
V(BR)CBO
Collector-Base Breakdown Voltage
IC=-1mA
-150
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-1mA
-150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=-1mA
- 5
V
ICBO
Collector Cutoff Current
VCB=-150V, IE=0
-5
μA
ICEO
Collector Cutoff Current
VCE=-150V, IC=0
-5
μA
IEBO
Emitter Cutoff Current
VEB=-5V, IC=0
-5
μA
hFE
DC Current Gain
VCE=-10V, IC=-0.5A
40
140
VCE(sat)
Collector-Base Breakdown Voltage
IC=-0.5A, IB=-50mA
-0.85
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=-0.5A, IB=-50mA
-1.5
V
a: tp≤300μs,δ≤2%
PACKAGE MECHANICAL DATA
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