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|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Repetitive peak reverse voltage |
VRRM |
3200 |
|
|
V |
|
|
Non repetitive peak reverse voltage |
VRSM |
3300 |
|
|
V |
|
|
Max. average forward current |
IF(AV)M |
|
10.9 |
|
A |
Sinewave,180o conduction,Tc=45oC |
|
Max. RMS forward current |
IF(RMS) |
|
40 |
|
A |
Nominal value |
|
Max. peak, one-cycle forward, non-repetitive surge current |
IFSM |
|
250 |
|
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 150 oC |
|
Maximum I2t for fusing |
I2t |
|
- |
|
A2s |
|
|
Max. forward voltage drop |
VFM |
|
2.72 |
|
V |
ITM = 55A; Tvj=25℃ |
|
Threshold voltage |
VF0 |
|
1.7 |
|
V |
|
Parameter
Symbol
Min.
Max.
Typ.
Units
Conditions
Operating temperature
Tj
-40
+150
oC
Storage temperature
Tstg
-40
+150
oC
Thermal resistance - junction to case
RQ (j-c)
-
K/W
Thermal resistamce - case to heatsink
RQ (c-s)
-
K/W
Mounting force
P
-
8
Nm
± 10%
Weight
W
-
-
115
g
Case style
-
See Outline Table
CASE OUTLINE AND DIMENSIONS.
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
