Thyristor Diode Module MFC200-16

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

YZPST-MFC200-16

THYRISTOR / DIODE MODULE

Features:
- Heat transfer through aluminium-nitride ceramic isolated metal baseplate
- Hard soldered joints for high reliability
- Thyristor with amplifying gate
Typical applications:
- DC motor control - AC motor soft starters
- Temperature control
- Professional light dimming

Reverse blocking - Off-state

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
YZPST MFC200	1600 V	1600 V	1700 V

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off-state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive reverse and off-state peak leakage current	IRRM, IDRM	70 mA (3)
Critical rate of rise of off-state voltage	dv/dt	1000 V/µs (4)

Conducting

Parameter	Symbol	Min	Max	Typ	Unit		Conditions
Average on-state / forward current	ITAV, IFAV		216			A	50 Hz sine wave,180o conduction,
							Tc = 85 °C
RMS on-state / forward current	ITRMS, IFRMS		340			A	50 Hz sine wave,180° conduction,
							Tc = 85 °C
Surge non repetitive current	ITSM, IFSM		6.8			kA	50 Hz sine wave
							Half cycle
I squared t	I2 t		231			kA2s	VR = 0
							Tj = Tjmax
Peak on-state / forward voltage	VTM, VFM		1.1			V	On-state current 200 A, Tj = Tjmax
Threshold voltage	VT(TO)		0.8			V	Tj = Tjmax
On-state slope resistance	rT		1.4			mΩ	Tj = Tjmax
Holding current	IH			150		mA	Tj = 25 °C
Latching current	IL			200		mA	Tj = 25 °C
Critical rate of rise of on-state current	di/dt		500			A/µs	IG = 5 IGT, tr= 1 µs, Tj = Tjmax, non rep.
RMS isolation voltage	VINS		3000			V	AC 50 Hz, 60 s

Triggering

Parameter	Symbol	Min	Max	Typ	Unit	Conditions
Gate current	IGT		150		mA		VD = 6 V; RL = 6 Ω; Tj = 25 °C
Gate voltage	VGT		2		V		VD = 6 V; RL = 6 Ω; Tj = 25 °C

OUTLINE AND DIMENSIONS

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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