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P/N:YZPST-BT151S SCRS
YZPST brand 650V BT151S-650R TO-252 SCR
Package
TO-252-2L
Main Feature （Tj= 25℃）
|
Symbol |
Value |
Unit |
|
IT(AV) |
7.5 |
A |
|
VDRM / VRRM |
≥ 600 |
V |
|
IGT |
3to 6 |
mA |
Absolute ratings (Limiting Values)
|
Symbol |
Parameter |
Value |
Unit |
|
IT (RMS) |
RMS on-state current (180 °conduction angle) |
12 |
A |
|
IT(AV) |
AV on-state current (180 °conduction angle) |
7.5 |
A |
|
ITSM |
Non repetitive surge peak on-state Current (tp= 10ms) |
100 |
A |
|
I2t |
(tp= 10ms) |
50 |
A2S |
|
IGM |
Peak gate current(tp=20us) |
2 |
A |
|
PGM |
Peak gate power |
5 |
W |
|
PG(AV) |
Average gate power |
0.5 |
W |
|
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+125 |
℃ |
|
Symbol |
Parameter |
Value |
Unit |
|
Rth (j-mb) |
Junction to case |
2.0 |
K/W |
|
Rth (j-a) |
Junction to ambient |
75 |
K/W |
| Symbol | Test Conditions | Value | Unit | |||
| Min | Type | Max | ||||
| IGT | VD=6V, RL= 100Ω | 3 | 5 | 6 | uA | |
| VGT | VD= 12V, RL= 100Ω | ----- | 0.7 | 0.8 | V | |
| VGD | VD=VDRM, RL=3.3KΩ Tj=110℃ | 0.2 | ----- | ----- | V | |
| IH | IT= 100mA Gate Open | ----- | 10 | mA | ||
| IL | IG= 1.2IGT | 20 | mA | |||
| dV/dt | VD=67%VDRM, GateOpen, Tj=125℃ | 50 | 125 | v/μs | ||
| ----- | ||||||
| VTM | IT= 16A,tp=380μs | ----- | ----- | 1.6 | V | |
| IDRM | VD=VDRM | 10 | μA | |||
| 500 | μA | |||||
| VR=VRRM | Tj=25℃ | ----- | ----- | 10 | μA | |
| IRRM | Tj=125℃ | ----- | ----- | 500 | μA | |
Measure of package
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
