
TO-220A
Main Feature (Tj=25℃)
Symbol |
Value |
Unit |
IT (RMS) |
12 |
A |
VDRM / VRRM |
600/800 |
V |
VTM |
1.55 |
V |
Absolute ratings (Limiting Values)
Symbol |
Parameter |
Value |
Unit |
ITSM |
Non repetitive surge peak on-state Current (tp=10ms) |
115 |
A |
I2t |
(tp=10ms) |
70 |
A2S |
dI/dt |
IG=2IGT ,tr≤100ns,Tj=125℃ |
50 |
A/ μs |
IGM |
Peak gate current(tp=20us) |
4 |
A |
PG(AV) |
Average gate power |
1 |
W |
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+125 |
℃ |
Thermai Resistances
Symbol
Parameter
Value
Unit
TO-220A
2.3
Rth (j-c)
Junction to case
TO-220B/TO-220C
1.4
℃/W
TO-220F
3.9
Electrical characteristics (Tj=25℃ unless otherwise stated)
Symbol
Test Conditions
Value
Unit
TW
SW
CW
BW
C
B
IGT
VD=12V, RL=30Ω
ⅠⅡⅢ
≤5
≤10
≤25
≤50
≤25
≤50
mA
Ⅳ
----
----
----
----
≤50
≤100
IDRM
VD=VDRM
Tj=25℃
≤5
μA
Tj=125℃
≤1
mA
IRRM
VD=VRRM
Tj=25℃
≤5
μA
Tj=125℃
≤1
mA
ⅠⅢ
≤10
≤25
≤50
≤70
≤40
≤50
IL
IG=1.2IGT
Ⅳ
----
----
----
----
≤40
≤50
mA
Ⅱ
≤15
≤30
≤60
≤80
≤80
≤100
VGT
VD=12V ,RL=30Ω
≤1.3
V
VGD
VD=VDRM, Tj=125℃RL=3.3KΩ
≥0.2
V
VTM
ITM=17A,tp=380 μs
1.55
V
IH
VD=12V ,IT=200mA
≤20
≤25
≤35
≤50
≤25
≤50
mA
dV/dt
VD=67%VDRM,
≥40
≥
≥
≥ 1000
≥
≥400
v/ μs
GateOpen, Tj=125℃
100
400
200
Measure of package
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier