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|
PARAMETETS |
|
|
Core Factor C1 |
\ mm-1 |
|
Effective Length Le |
\ mm |
|
Effective Cross Area Ae |
\ mm2 |
|
Effective Volume Ve |
\ mm3 |
|
Apporx .Weight |
645 g/set |
MATERIAL CHARACTERISTICS
| Characteristice | Symbol | Unit | PTS40 | |
| Initial permeability | ui | \ | 2300±25% | |
| mT | 25℃ | 510 | ||
| Saturation flux density | Bs | （1000A/m） | 100℃ | 390 |
| Remanence | Br | mT | 120 | |
| Coercivity | Hc | A/m | 13 | |
| 25℃ | \ | |||
| Power loss | Pc | KW/m3 | 60℃ | 550 |
| f=100kHz，B=200mT | 100℃ | 410 | ||
| Curie temperature | Tc | ℃ | >230 | |
| Resistivity | ρ | Ω*m | 6.5 | |
| Density | d | Kg/m3 ×103 | 4.8 | |
| Note ：The values were obtaioned with toroidal eores at room remperature unless otherwise shown | ||||
Maximum chip off：
a. The depth of crack in the ground surface should be no more than 0.3mm,length is no more than 1/4, length of lengthen line. In the non-ground surface, the depth should be no more than 0.5mm length is no more than 1/3 length ot lengthen line.
PACKAGE:
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
