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SCRS
YZPST-BT151
YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
●Main Feature (Tjj=2255℃)
|
Symbol |
Value |
Unit |
|
IT(AV) |
7.5 |
A |
|
VDRM / VRRM |
≥ 600 |
V |
|
IGT |
1 to 20 |
mA |
●Absolute ratings (Limiting Values)
|
Symbol |
Parameter |
Value |
Unit |
|
IT(RMS) |
RMS on-state current (180°conduction angle) |
12 |
A |
|
IT(AV) |
AV on-state current (180°conduction angle) |
7.5 |
A |
|
ITSM |
Non repetitive surge peak on-state Current (tp=10ms) |
100 |
A |
|
I2t |
(tp=10ms) |
50 |
A2S |
|
IGM |
Peak gate current(tp=20us) |
2 |
A |
|
PGM |
Peak gate power |
5 |
W |
|
PG(AV) |
Average gate power |
0.5 |
W |
|
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+125 |
℃ |
●Thermai Resistances
|
Symbol |
Parameter |
Value |
Unit |
|
Rth (j-c) |
Junction to case |
1.3 |
K/W |
|
Rth (j-a) |
Junction to ambient |
60 |
K/W |
●Electrical characteristics (Tj=25℃ unless otherwise stated)
|
Symbol |
Test Conditions |
Value |
Unit |
|||
|
Min |
Type |
Max |
||||
|
IGT |
VD=6V, RL=100Ω |
1 |
5 |
20 |
uA |
|
|
VGT |
VD=12V, RL=100Ω |
----- |
0.7 |
0.8 |
V |
|
|
VGD |
VD=VDRM, RL=3.3KΩ Tj=110℃ |
0.2 |
----- |
----- |
V |
|
|
IH |
IT=100mA Gate Open |
----- |
9 |
20 |
mA |
|
|
dV/dt |
VD=67%VDRM, GateOpen, Tj=125℃ |
50 |
125 |
----- |
v/μs |
|
|
VTM |
IT=16A,tp=380μs |
----- |
----- |
1.7 |
V |
|
|
IDRM IRRM |
VD=VDRM VR=VRRM |
Tj=25℃ |
----- |
----- |
20 |
uA |
|
Tj=110℃ |
----- |
----- |
300 |
uA |
||
●Measure of package (TO-220E)
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Main Product:
Semiconductor Triac,
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Silicon Transistor,
Bridge Rectifier
