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High Voltage Diode YZPST-CL08-12T

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Product details

High Voltage Diode of CL08-12

1. Main Specification

No.

Item

Symbol

Unit

Rating

Conditions

1

Repetitive Peak Reverse Voltage

VRRM

KV

12

 

2

Average Forward Current

IF (AV)

mA

350

Tamb=60 

50HZ Sine-half Wave

Rectification Average Value

3

Forward Surge Current

IFSM

A

15

Tamb=25 

50HZ Sine-half Wave,One Shot

4

Reverse Surge Current

IRSM

A

0.2

Pulse width 1ms triangle wave single pulse

5

Maximum Junction Temperature=

Tjmax

130

 

6

Storage Temperature

Tstg

-40~+130

2. Electric Specification

No.

Item

Symbol

Unit

Rating

Test conditions

1

Forward Voltage Drop

VFM

V

18.5max

IF(AV)=350mA

2

Normal Temperature Reverse Current

IRM1

A

5max

VRM=12KV

3

High Temperature Reverse Current

IRM2

A

50max

Tamb=100

VRM=12KV

4

Reverse Breakdown Voltage

VZ

KV

12~18

IR=100uA

5

Reverse Recovery Time

trr

nS

80 max

IF=IR=100mA, 90%

(Tamb=25 oC, unless otherwise specified)

3. Application

For high voltage rectification for Micro Wave oven;

Other electronic rectification fields

5. Dimensions (in mm)

High Voltage Diode of CL08-12

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7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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