私域5STP34N5200 截取视频15秒 (2)-4.76MB

私域5STP34N5200 截取视频15秒 (2)-4.76MB

5 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

HIGH POWER THYRISTOR FOR PHASE CONTROL

YZPST-5STP34N5200

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

VRRM (1)	VDRM (1)	VRSM (1)
5200	5200	5300

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM
/}I_DRM

30 mA

95mA (3)

Critical rate of voltage rise

dV/dt (4)

2000 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Max. Average value of on-state current	I_T(AV)_M		3600		A	Sinewave,180^o conduction T_C = 70 ^oC
RMS value of on-state current	I_TRMS		5850		A	Nominal value
Peak one cpstcle surge (non repetitive) current	I_TSM		63		kA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		19.8×10³		kA²s
Latching current	I_L		500		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		125		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		1.54		V	I_TM =3000 A; T_vj=125℃
Threshold voltage	V_T_O		1.03		V	T_vj=125℃
Slope resistance	R_t		0.16		mΩ	T_vj=125℃
Critical rate of rise of on-state current (5, 6)	di/dt		1000		A/ms	Switching from V_DRM £ 1500 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		200		A/ms	Switching from V_DRM £ 1500 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		-		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		7		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		- 400 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 2.6 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		10		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		-		ms	I_TM =50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		700		ms	I_TM = 2000 A; di/dt = 1.5 A/ms; V_R ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cpstcle ³ 0.01%
Reverse recovery charge	Q_rr		5200		mAs	I_TM = 2000 A; di/dt = 1.5 A/ms; V_R ³200 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+140		^oC
Thermal resistance - junction to case	R_Q_(j-c)		5.7 11.4		K/kW	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		1 2		K/kW	Double sided cooled * Single sided cooled *
Thermal resistance - junction to heatsink	R_Q_(j-_s₎		- -		K/kW	Double sided cooled * Single sided cooled *
Mounting force	P	81	108	-	kN
Weight	W	-	-	2.9	Kg

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

THYRISTOR 5STP34N52 (3)

Sym	A	B	C	D	H
mm	150	100	108	3.5×3	35±1

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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