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DESCRIPTION:
The MCR111-8 SCR series provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.
MAIN FEATURES:
|
symbol |
value |
unit |
|
IT(RMS) |
1.8 |
A |
|
VDRM/VRRM |
811 |
V |
|
VTM |
s1.5 |
V |
|
Parameter |
symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-41~151 |
C |
|
Operating junction temperature range |
Tj |
-41~111 |
C |
|
Repetitive peak off-state voltage (Tj=25C) |
VDRM |
811 |
V |
|
Repetitive peak reverse voltage (Tj=25C) |
VRRM |
811 |
V |
|
RMS on-state current (TC=81C) |
IT(RMS) |
1.8 |
A |
|
Non repetitive surge peak on-state current (full cycle, F=51Hz) |
ITSM |
11 |
A |
|
I2t value for fusing (tp=11ms) |
I2t |
1.5 |
A2s |
|
Critical rate of rise of on-state current (IG=2xIGT) |
dI/dt |
51 |
A/us |
|
Peak gate current |
IGM |
1.2 |
A |
|
Average gate power dissipation |
PG(AV) |
1.1 |
W |
|
Peak gate power |
PGM |
1.5 |
W |
Voltage ruggedness and reliability
Latest generation SCR technology for improved noise immunity
High commutation capability with maximum false trigger immunity and very high immunity to false turn-on by dV/dt
Surface Mountable Package
1000V maximum voltage
|
YZPST
|
|
|
|
|
|
MCR100
|
BT169
|
CR02, CR03
|
MCR100-8I
|
MCR100-8
|
Applications:
GFCI
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
